 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Type IPB037N06N3 G TM IPI040N06N3 G IPP040N06N3 G OptiMOS 3 Power-Transistor Features * for sync. rectification, drives and dc/dc SMPS * Excellent gate charge x R DS(on) product (FOM) * Very low on-resistance R DS(on) * N-channel, normal level * Avalanche rated * Qualified according to JEDEC1) for target applications * Pb-free plating; RoHS compliant * Halogen-free according to IEC61249-2-21 Type IPB037N06N3 G IPI040N06N3 G Product Summary V DS R DS(on),max (SMD) ID 60 3.7 90 V m A previous engineering sample codes: IPP04xN06N IPI04xN06N IPB04xN06N IPP040N06N3 G Package Marking PG-TO263-3 037N06N PG-TO262-3 040N06N PG-TO220-3 040N06N Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 C2) T C=100 C Pulsed drain current3) Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) 2) 3) 4) Value 90 90 360 165 20 Unit A I D,pulse E AS V GS P tot T j, T stg T C=25 C I D=90 A, R GS=25 mJ V W C T C=25 C 188 -55 ... 175 55/175/56 J-STD20 and JESD22 Current is limited by bondwire; with an R thJC=0.8 K/W the chip is able to carry 162 A. See figure 3 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.03 page 1 2009-12-17 IPB037N06N3 G IPI040N06N3 G IPP040N06N3 G Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA minimal footprint 6 cm cooling area 4) 0.8 62 40 K/W Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=1 mA V GS(th) V DS=V GS, I D=90 A V DS=60 V, V GS=0 V, T j=25 C V DS=60 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=90 A V GS=10 V, I D=90 A, (SMD) Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=90 A 60 2 3 4 V Zero gate voltage drain current I DSS - 0.1 1 A 61 10 1 3.3 3.0 1.3 121 100 100 4 3.7 S nA m Rev. 1.03 page 2 2009-12-17 IPB037N06N3 G IPI040N06N3 G IPP040N06N3 G Parameter Symbol Conditions min. Values typ. max. Unit Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 5) Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge 5) C iss C oss C rss t d(on) tr t d(off) tf V DD=30 V, V GS=10 V, I D=90 A, R G=3.5 V GS=0 V, V DS=30 V, f =1 MHz - 8000 1700 58 30 70 40 5 11000 pF 2300 87 ns Q gs Q gd Q sw Qg V plateau Q oss V DD=30 V, V GS=0 V V DD=30 V, I D=90 A, V GS=0 to 10 V - 42 9 27 98 5.3 79 - nC V nC IS I S,pulse V SD t rr Q rr T C=25 C V GS=0 V, I F=90 A, T j=25 C V R=30 V, IF=50A, di F/dt =100 A/s - 0.97 125 110 90 360 1.2 - A V ns nC See figure 16 for gate charge parameter definition Rev. 1.03 page 3 2009-12-17 IPB037N06N3 G IPI040N06N3 G IPP040N06N3 G 1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS10 V 200 100 160 80 120 60 P tot [W] 80 I D [A] 40 40 20 0 0 50 100 150 200 0 0 50 100 150 200 T C [C] T C [C] 3 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p 103 limited by on-state resistance 1 s 10 s 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 100 0.5 10 2 100 s 10 ms 1 ms 0.2 Z thJC [K/W] I D [A] DC 0.1 10 1 10-1 0.05 0.02 0.01 single pulse 100 10-1 10 -1 10-2 10 0 10 1 10 2 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev. 1.03 page 4 2009-12-17 IPB037N06N3 G IPI040N06N3 G IPP040N06N3 G 5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 320 10 V 8V 7V 6.5 V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS 15 5.5 V 5V 4.5 V 12 240 R DS(on) [m] 6V 9 I D [A] 160 6 6.5 V 6V 5.5 V 80 3 5V 10 V 7V 8V 4.5 V 0 0 1 2 3 4 5 0 0 50 100 150 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 320 8 Typ. forward transconductance g fs=f(I D); T j=25 C 200 160 240 120 160 g fs [S] 80 175 C 25 C I D [A] 80 40 0 0 2 4 6 0 0 50 100 150 V GS [V] I D [A] Rev. 1.03 page 5 2009-12-17 IPB037N06N3 G IPI040N06N3 G IPP040N06N3 G 9 Drain-source on-state resistance R DS(on)=f(T j); I D=90 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS parameter: I D 8 4 7 3.5 900 A 6 3 90 A R DS(on) [m] 5 4 10V V GS(th) [V] 100 140 180 98% 2.5 2 3 1.5 2 1 1 0.5 0 -60 -20 20 60 0 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 104 Ciss 103 Coss 25 C 103 102 175 C, 98% 175 C C [pF] I F [A] 25 C, 98% 102 Crss 101 101 0 20 40 60 100 0 0.5 1 1.5 2 V DS [V] V SD [V] Rev. 1.03 page 6 2009-12-17 IPB037N06N3 G IPI040N06N3 G IPP040N06N3 G 13 Avalanche characteristics I AS=f(t AV); R GS=25 parameter: T j(start) 100 14 Typ. gate charge V GS=f(Q gate); I D=90 A pulsed parameter: V DD 12 25 C 100 C 10 12 V 30 V 48 V 8 150 C 10 V GS [V] 1 10 100 1000 I AS [A] 6 4 2 1 0 0 20 40 60 80 100 t AV [s] Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA 16 Gate charge waveforms 70 V GS Qg 65 V BR(DSS) [V] 60 V g s(th) 55 Q g(th) Q gs -60 -20 20 60 100 140 180 Q sw Q gd Q g ate 50 T j [C] Rev. 1.03 page 7 2009-12-17 IPB037N06N3 G IPI040N06N3 G IPP040N06N3 G PG-TO220-3 Rev. 1.03 page 8 2009-12-17 IPB037N06N3 G IPI040N06N3 G IPP040N06N3 G PG-TO262-3 (I-Pak) Rev. 1.03 page 9 2009-12-17 IPB037N06N3 G IPI040N06N3 G IPP040N06N3 G PG-TO263 (D-Pak) Rev. 1.03 page 10 2009-12-17 IPB037N06N3 G IPI040N06N3 G IPP040N06N3 G Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.03 page 11 2009-12-17 |
Price & Availability of IPP040N06N3G
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |